ОСОБЛИВОСТІ ОТРИМАННЯ НИЗЬКОАГЛОМЕРОВАНОГО НАНОРОЗМІРНОГО ДІОКСИДУ ЦИРКОНІЮ

О.О. Пасенко, В.Г. Верещак, О.В. Кожура, Н.І. Завгородня

Державний вищий навчальний заклад «Український державний хіміко-технологічний університет»

SOME FEATURES OF PRODUCTION OF LOW-AGGLOMERATED STABILIZED NANOSIZE ZIRCONIA

O.O. Pasenko, V.G. Vereshchak, O.V. Kozhura, N. Zavhorodnia

Ukrainian State Chemical and Technological University

In this paper we study the effect of n-butanol on zirconia aggregation and agglomeration processes. It is established that to obtain low-agglomerated zirconia powders, the process of dewatering must be done by means of azeotropic distillation with n-butanol. It was demonstrated that n-butanol blocks zirconium hydroxide surface area due to formation of superficial ethers and prevents the contacts of hydroxide particles with each other.

НОВЫЙ КЛАСС НАНОМАТЕРИАЛОВ С УНИКАЛЬНЫМИ СВОЙСТВАМИ НА ОСНОВЕ МНОГОКОМПОНЕНТНЫХ ВЫСОКОЭНТРОПИЙНЫХ СПЛАВОВ

С.А. Фирстов, В.Ф. Горбань, Н.А. Крапивка, Э.П. Печковский

Институт проблем материаловедения им. И. Н. Францевича НАН Украины, Киев

NEW CLASS OF NANOMATERIALS WITH UNIQUE PROPERTIES ON THE BASIS OF MULTICOMPONENT HIGH-ENTROPY ALLOYS

S.A. Firstov, V.F. Gorban, N.A. Krapivka, E.P. Pechkovsky

Frantsevich Institute for Problems of Materials Science of NASU, Kiev

For the first time in this work scientifically proved and experimentally confirmed ap-proach to formation of phase composition and a structural state of a new class of materi-als - metal cast multicomponent high-entropy alloys (HEA) is submitted. In a basis of this approach there is a complex account of an electronic structure of atoms for the ele-ments included in an alloy, their atomic radiuses, enthalpy mixtures, and also structures and physical properties of crystalline lattices which form these elements. One of possi-ble variants of the decision of a problem for creation new technological thermally stable materials with high operational characteristics at the raised temperatures is offered.

ПОЛУЧЕНИЕ И СВОЙСТВА КОМПОЗИТОВ МНОГОСЛОЙНЫХ УГЛЕРОДНЫХ НАНОТРУБОК С ПОЛИАНИЛИНОМ

Дьячкова Т.П., Мележик А.В., Фетисова Ж.Г., Ткачев А.Г., Филатова Е.Ю.

Тамбовский государственный технический университет, Россия, Тамбов

SYNTHESIS AND PROPERTIES OF THE POLYANILINE/CARBON NANOTUBES NANOCOMPOSITES

T.P. Dyachkova, A.V. Melezhyk, Z.G. Fetisova, E.M. Utkina,
A.G. Tkachev, E.Ju. Filatova

Tambov State Technical University, Russia, Tambov

Influence of the nature of oxidant and conditions of oxidative polymerization on the yield and electroconductivity of polyaniline was studied. Composites of polyaniline with multiwalled carbon nanotubes were obtained. It was shown that the method and degree of preliminary functionalization of carbon nanotubes influences the quality of the polyaniline coating and electrophysical properties of the composites.

ЭЛЕКТРОННЫЕ СВОЙСТВА И ГЛУБОКИЕ ЛОВУШКИ ОБЛУЧЕННЫХ ЭПИТАКСИАЛЬНЫХ ПЛЕНОК GaN

В.Н. Брудный(a), С.С. Веревкин(b), Н.Г. Колин(b), А.В. Корулин(b), А.Я. Поляков©
(a) НИ Томский государственный университет, Томск, Россия
(b) ФГУП НИФХИ им. Л.Я. Карпова, Обнинск, Россия
© ГИРЕДМЕТ, Москва, Россия

ELECTRON PROPERTIES AND DEEP TRAPS OF IRRADIATED EPITAXIAL GaN FILMS

V.N. Brudnyi (a), S.S. Verevkin (b), N.G. Kolin (b), A.V. Korulin (b), A.Ya. Plyakob ©
(a) National research Tomsk State University, Tomsk, Russia, brudnyi@mail.tsu.ru
(b) FФSUE L. Ya. Karpov SIPhChI, Obninsk, Russia
©State Institute of Rare Metals, Moskov, Russia

The influence of heavy electron, proton and neutron bombardment and post-irradiation annealing in the temperature range 100÷1000 С on the electron properties and the deep traps spectra of epitaxial GaN films on Al2O3 substrate are investigated. The hard irradiation of GaN moves the Fermi-level into the boundary position near Ec – (0.8 - 0.9) eV that results in increases of specific electroresistance up to 1010 – 1012 Om×сm near room temperature. The deep traps spectra in irradiated GaN samples are researched. It was shown that the restoring of the initial properties of irradiated material take place in the temperature range 100÷1000 С with the main annealing stage of the radiation-induced defects near 4000С

ВЫСОКОЧАСТОТНЫЙ ФОТОПРИЕМНИК НА ОСНОВЕ КРЕМНИЯ С КВАНТОВЫМИ ТОЧКАМИ ГЕРМАНИЯ

В.Н. Брудный, В.А. Донченко. А.А. Землянов
Национальный Исследовательский Томский Государственный Университет, Томск, Россия brudnyi@mail.tsu.ru

HIGH FREQUENCY PHOTODETECTOR ON THE BASE OF SILICON WITH GERMANIUM QUANTUM DOTS

V.N. Brudnyi, V.A. Donchenko, A.A. Zemlyanov
National Research Tomsk State University, Tomsk, Russia

Multilayer’s silicon structures, up to 30 silicon layers, with a periodic array of small, lower than 10 nm, germanium quantum dots with the surface densities at about (1 – 10) 1011 cm-2 have been grown using molecular beam epitaxy (MBE). Such structures have good spectral photosensitivity in the range 1,3 – 1,5 μm and can be used as the high frequency photodetectors at room temperature.

CORRELATION OF PARTICLE FLUXES AND DIAMOND LIKE CARBON FILM PROPERTIES USING AN ARC PLASMA SOURCE ADJUSTABLE FROM CATHODIC TO ANODIC MODE

Oleksiy Filipov, Prof. Dr.Volker Buck

Thin Film Technology Group, Dept. of Physics, University of Duisburg-Essen, Duisburg, Germany

In order to adjust their properties, DLC films were deposited by using different deposition regimes of DC vacuum arc plasma source. The variation in process parameters such as substrate bias and gas admixture is used to influence the film properties. The plasma parameters were monitored during deposition by mass-spectrometer and retarding field energy analyzer. The films were deposited on polished (100) Si and glass substrates in order to investigate their mechanical and optical properties. In order to investigate the surface morphology and surface roughness of deposited films, SEM and AFM were used. The optical properties of the films were ex-situ examined by UV-VIS spectroscopy and from these data details of the band structure were modelled.
The relation between particle energy and deposited film properties is determined.